SI4435DY-T1-A-E3 Vishay Semiconductors, SI4435DY-T1-A-E3 Datasheet

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SI4435DY-T1-A-E3

Manufacturer Part Number
SI4435DY-T1-A-E3
Description
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SI4435DY-T1-A-E3

Case
SOP8
Date_code
07+

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4435DY-T1-A-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70149
S-51472—Rev. G, 01-Aug-05
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board, t v 10 sec.
DS
–30
30
(V)
Ordering Information: Si4435DY-T1–REV A
G
S
S
S
J
J
a
a
0.035 @ V
0.02 @ V
= 150_C)
= 150_C)
a
r
Si4435DY-T1–A–E3 (Lead (Pb)-Free)
1
2
3
4
DS(on)
Parameter
Parameter
GS
GS
a
a
Top View
= –10 V
SO-8
(W)
= –4.5 V
P-Channel 30-V (D-S) MOSFET
a
8
7
6
5
D
D
D
D
I
D
–8.0
–6.0
(A)
_
T
T
T
T
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
Symbol
Symbol
D Lead (Pb)-Free Version is RoHS
T
R
G
J
V
V
I
P
P
, T
DM
I
I
I
thJA
GS
DS
D
D
S
Compliant
D
D
stg
P-Channel MOSFET
S
D
–55 to 150
Vishay Siliconix
Limit
Limit
"20
–8.0
–6.4
–2.1
–30
–50
2.5
1.6
50
Si4435DY
www.vishay.com
Unit
Unit
_C/W
_C
W
W
V
V
A
A
1

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