MG1200FXF1US51 TOSHIBA Semiconductor CORPORATION, MG1200FXF1US51 Datasheet
MG1200FXF1US51
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MG1200FXF1US51 Summary of contents
Page 1
... Maximum Ratings Characteristics Collector-emitter voltage Gate-emitter voltage Collector current 1 ms Peak 1 cycle surge current 10 ms (half sine) Operating junction temperature Storage temperature range Isolation voltage Terminal: M4/M8 Screw torque Mounting Caution: MG1200FXF1US51 has no short-circuit capability. Symbol Rating V 3300 CES ±20 V GES DC I 1200 C I ...
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... / -4900 A/ms dsw F = 1800 Symbol Test Condition Transistor (IGBT) stage R th (j-c) Diode stage R Per module th (c-f) 2 MG1200FXF1US51 Min Typ. Max = 0 V ¾ ¾ ± ¾ 75 100 ¾ ¾ 4 ¾ 4.6 5 100 kHz ¾ ¾ ...
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... MG1200FXF1US51 I – V (typ 25°C 125° Forward voltage V F (V) E – I (typ.) off 1800 3 0 160 +/- 125°C 500 ...
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... Package Dimensions: 2-193A1A MG1200FXF1US51 4 Unit: mm 2001-09-05 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. MG1200FXF1US51 5 000707EAA 2001-09-05 ...