MG1200FXF1US51 TOSHIBA Semiconductor CORPORATION, MG1200FXF1US51 Datasheet - Page 3

• Manufacturer Part Number: MG1200FXF1US51
• Manufacturer: TOSHIBA Semiconductor CORPORATION

2500
2000
1500
1000
500
2.5
2.0
1.5
0.5
1.2
1.0
0.8
0.4
0.2
1.0
0.6
0
0
0
0
0
0
Collector-emitter voltage V CE
2
Collector current I C (A)
Forward current I F (A)
500
500
T vj = 25°C
I
E
E
C
on
dsw
– V
4
– I
– I
CE
C
F
1000
1000
V CC = 1800 V
R G = 3.9 W
C GE = 0.1 mF
L s = 160 nH
V GE = +/-15 V
T vj = 125°C
V CC = 1800 V
di/dt = 4900 A/ms
L s = 160 nH
V GE = -15 V
T vj = 125°C
6
V GE = +15 V
(V)
125°C
(typ.)
(typ.)
(typ.)
1500
1500
8
3
0.00003
0.0001
0.001
2500
2000
1500
1000
0.01
500
2.5
2.0
1.5
1.0
0.5
0.1
0.001
0
0
0
0
0.01
Forward voltage V F (V)
Collector current I C (A)
500
2
Time t (s)
T vj = 25°C
E
I
R
F
off
0.1
th
– V
MG1200FXF1US51
– I
– t
Diode-stage
F
C
IGBT-stage
1000
4
V CC = 1800 V
R G = 3.3 W
C GE = 0.1 mF
L s = 160 nH
V GE = +/-15 V
T vj = 125°C
1
125°C
(max)
(typ.)
(typ.)
2001-09-05
1500
10
6