BSM100GB120DN2

Manufacturer Part NumberBSM100GB120DN2
DescriptionIGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
ManufacturerSiemens Semiconductor Group
BSM100GB120DN2 datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
Page 1/9

Download datasheet (133Kb)Embed
Next
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 100 GB 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
= 20 k
GE
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current, t
T
= 25 °C
C
T
= 80 °C
C
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Semiconductor Group
V
I
Package
CE
C
1200V 150A
HALF-BRIDGE 2
Symbol
V
CE
V
CGR
V
GE
I
C
= 1 ms
I
p
Cpuls
P
tot
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
1
BSM 100 GB 120 DN2
Ordering Code
C67076-A2107-A70
Values
Unit
1200
V
1200
± 20
A
150
100
300
200
W
800
+ 150
°C
-55 ... + 150
0.16
K/W
0.3
2500
Vac
20
mm
11
F
-
55 / 150 / 56
Mar-29-1996

BSM100GB120DN2 Summary of contents