BSM200GAL120DN2

Manufacturer Part NumberBSM200GAL120DN2
DescriptionIGBT Power Module (Single switch with chopper diode Package with insulated metal base plate)
ManufacturerSiemens Semiconductor Group
BSM200GAL120DN2 datasheet
 


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IGBT Power Module
• Single switch with chopper diode
• Package with insulated metal base plate
Type
BSM 200 GAL 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
= 20 k
GE
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current, t
T
= 25 °C
C
T
= 80 °C
C
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Semiconductor Group
V
I
Package
CE
C
1200V 290A
HALFBRIDGE GAL 2B C67070-A2301-A70
Symbol
V
CE
V
CGR
V
GE
I
C
= 1 ms
I
p
Cpuls
P
tot
T
j
T
stg
R
thJC
R
thJCD
R
THJCDC
V
is
-
-
-
-
1
BSM 200 GAL 120 DN2
Ordering Code
Values
Unit
1200
V
1200
± 20
A
290
200
580
400
W
1400
+ 150
°C
-55 ... + 150
0.09
K/W
-
0.125
2500
Vac
20
mm
11
F
-
55 / 150 / 56
Jun-13-1996

BSM200GAL120DN2 Summary of contents