BSS229 Siemens Semiconductor Group, BSS229 Datasheet
BSS229
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BSS229 Summary of contents
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SIPMOS Small-Signal Transistor V 250 0. 100 DS(on) N channel Depletion mode High dynamic resistance Available grouped in V GS(th) Type Ordering Tape and Reel Code Information BSS 229 Q62702-S600 E6296: 1500 pcs/reel; 2 ...
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Electrical Characteristics ˚C, unless otherwise specified. j Parameter Static Characteristics Drain-source breakdown voltage 0. Gate threshold voltage ...
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Electrical Characteristics (cont’ ˚C, unless otherwise specified. j Parameter Reverse Diode Continuous reverse drain current ˚C A Pulsed reverse drain current ˚C A Diode forward on-voltage 0.14 ...
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Characteristics ˚C, unless otherwise specified Total power dissipation tot Typ. output characteristics parameter Semiconductor Group Safe operating area A parameter ...
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Typ. transfer characteristics parameter Drain-source on-resistance DS(on) j parameter 0.014 Semiconductor Group Typ. forward ...
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V Gate threshold voltage GS(th) parameter mA, (spread Drain current = ( ) D A parameter Semiconductor Group Forward ...