BSS229 Siemens Semiconductor Group, BSS229 Datasheet

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BSS229

Manufacturer Part Number
BSS229
Description
Manufacturer
Siemens Semiconductor Group
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS229
Manufacturer:
SIEMENS
Quantity:
170
SIPMOS Small-Signal Transistor
Type
BSS 229 Q62702-S600 E6296: 1500 pcs/reel;
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current,
Pulsed drain current,
Max. power dissipation,
Operating and storage temperature range
Thermal resistance, chip-ambient
(without heat sink)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Semiconductor Group
V
I
R
N channel
Depletion mode
High dynamic resistance
Available grouped in
D
DS
DS(on)
250 V
0.07 A
100
Ordering
Code
R
GS
= 20 k
V
GS(th)
Tape and Reel
Information
2 reels/carton; source first
T
T
T
A
A
A
= 25 ˚C
= 25 ˚C
= 25 ˚C
1
Symbol
V
V
V
V
I
I
P
T
R
D
D puls
j
DS
DGR
GS
gs
tot
thJA
,
T
stg
1
G
Pin Configuration Marking Package
2
D
Values
250
250
0.07
0.21
0.63
– 55 … + 150
E
55/150/56
14
20
200
3
S
SS229
Unit
V
A
W
˚C
K/W
1
BSS 229
TO-92
2
3
04.97

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BSS229 Summary of contents

Page 1

SIPMOS Small-Signal Transistor V 250 0. 100 DS(on) N channel Depletion mode High dynamic resistance Available grouped in V GS(th) Type Ordering Tape and Reel Code Information BSS 229 Q62702-S600 E6296: 1500 pcs/reel; 2 ...

Page 2

Electrical Characteristics ˚C, unless otherwise specified. j Parameter Static Characteristics Drain-source breakdown voltage 0. Gate threshold voltage ...

Page 3

Electrical Characteristics (cont’ ˚C, unless otherwise specified. j Parameter Reverse Diode Continuous reverse drain current ˚C A Pulsed reverse drain current ˚C A Diode forward on-voltage 0.14 ...

Page 4

Characteristics ˚C, unless otherwise specified Total power dissipation tot Typ. output characteristics parameter Semiconductor Group Safe operating area A parameter ...

Page 5

Typ. transfer characteristics parameter Drain-source on-resistance DS(on) j parameter 0.014 Semiconductor Group Typ. forward ...

Page 6

V Gate threshold voltage GS(th) parameter mA, (spread Drain current = ( ) D A parameter Semiconductor Group Forward ...

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