21285-AB Dc Specifications - Intel Corporation

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21285-AB

Manufacturer Part Number
21285-AB
Description
Microprocessor, 21285 Core Logic For SA-110 Microprocessor
Manufacturer
Intel Corporation
Datasheet

Specifications of 21285-AB

Case
BGA
Dc
99+/00+
Electrical Specifications
9.3

DC Specifications

Table 9-3
defines the dc parameters met by all 21285 PCI signals under normal operating
conditions.
Note: In
Table
9-3, currents into the chip (chip sinking) are denoted as positive (+) current. Currents
from the chip (chip sourcing) are denoted as negative (–) current.
Table 9-3. DC Parameters
Symbol
Parameter
Power Signal
V
Supply voltage
dd
PCI Signals
V
Low-level input voltage
il
V
High-level input voltage
ih
V
Low-level output voltage
ol
V
Low-level output voltage
ol5V
V
High-level output voltage
oh
V
High-level output voltage
oh5V
I
Low-level input leakage current
il
C
Input pin capacitance
in
C
idsel pin capacitance
IDSEL
C
pci_clk pin capacitance
clk
Non-PCI Signals
V
IC input high voltage
ihc
V
IC input low voltage
ilc
f
I
Input leakage current
ilc
g
V
High-level output voltage
ohc
g
V
Low-level output voltage
olc
h
V
High-level output voltage
ohc
h
V
Low-level output voltage
olc
I
Tristate leakage current
ts
C
Input pin capacitance
in
C
Input/output pin capacitance
io
I
Power supply current
dd
a.
Guarantees meeting the specification for the 5-V signaling environment.
b.
For 3.3-V signaling environment.
c.
For 5-V signaling environment.
d.
Voltage measured with respect to V
e.
IC-CMOS-level inputs (include IC and ICOCZ pin types).
f.
Leakage currents for ma[12:0] and ba[1:0] are -200 µA minimum and 200 µA maximum.
g.
Not including clocks.
h.
Including clocks (MCLK, fclk, and sdclk[3:0]).
9-2
Condition
a
a
b
I
= 1500 µA
out
c
I
= 6 mA
out
b
I
= –500 µA
out
d
I
= –2 mA
out
a,e
0 < V
< V
in
dd
d,e
d,e
0 < V
< V
in
dd
d,e
I
= –4 mA
oh
d,e
I
= 4 mA
ol
d
I
= –12 mA
oh
I
= 12 mA
ol
ss.
21285 Core Logic for SA-110 Datasheet
Minimum
Maximum
Unit
3.0
3.6
V
–0.5
0.3 V
V
dd
V
+ 0.5
dd
0.5 V
V
dd
V
0.1 V
V
dd
0.55
V
0.9 V
V
dd
2.4
V
±10
µA
10.0
pF
8.0
pF
5.0
12.0
pF
0.8
V
V
+ 0.5
V
dd
dd
–0.5
0.2
V
V
dd
–10
10
µA
2.4
V
0.4
V
2.4
V
0.4
V
100
µA
5
pF
12
pF
490
mA

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