MBM29F200TC-70PFTN Meet Spansion Inc., MBM29F200TC-70PFTN Datasheet
MBM29F200TC-70PFTN
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MBM29F200TC-70PFTN Summary of contents
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SPANSION Flash Memory TM Data Sheet September 2003 This document specifies SPANSION Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and ...
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... MBM29F200TC GENERAL DESCRIPTION The MBM29F200TC/ 2M-bit, 5.0 V-only Flash memory organized as 256K bytes of 8 bits each or 128K words of 16 bits each. The MBM29F200TC/BC is offered in a 48-pin TSOP (1) and 44-pin SOP packages. This device is designed to be programmed in-system with the standard system 5 required for write or erase operations ...
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... The MBM29F200TC/BC is pin and command set compatible with JEDEC standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations ...
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... MBM29F200TC FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP (1) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 44-pin SOP (Package suffix: PF) • ...
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... N.C. 17 N.C. 16 RY/BY 15 N.C. 14 N.C. 13 MBM29F200TC/MBM29F200BC RESET N. Pin name ...
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... MBM29F200TC BLOCK DIAGRAM RY/BY Buffer State Control BYTE RESET Command Register CE OE Low V Detector LOGIC SYMBOL /MBM29F200BC -55/70/90 RY/BY Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer for Address Program/Erase Latch X-Decoder ...
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... Legend Manufacturer and device codes may also be accessed via a command register write sequence. Refer to “MBM29F200TC/BC Command Definitions Table” in “ FLEXIBLE SECTOR-ERASE ARCHITECTURE” Refer to the section on Sector Protection can ...
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... The system should generate the following address patterns: Word Mode: 555h or 2AAh to addresses A Byte Mode: AAAh or 555h to addresses A Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. The command conbinations not described in “MBM29F200TC/BC Command Definitions Table” in “ FLEXIBLE SECTOR-ERASE ARCHITECTURE” are illegal. /MBM29F200BC -55/70/90 ...
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... MBM29F200TC -55/70/90 MBM29F200TC/BC Sector Protection Verify Autoselect Codes Table Type Manufacturer’s Code MBM29F200TC Device Code MBM29F200BC Sector Protection * for Byte mode Outputs 01h at protected sector addresses and outputs 00h at unprotected sector addresses. Type Code Manufacturer’s Code 04h (B) 51h ...
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... MBM29F200TC Sector Address Table (MBM29F200TC) Sector Address SA0 0 0 SA1 0 1 SA2 1 0 SA3 1 1 SA4 1 1 SA5 1 1 SA6 1 1 Sector Address Table (MBM29F200BC) Sector Address SA0 0 0 SA1 0 0 SA2 0 0 SA3 0 0 SA4 0 1 SA5 ...
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... FUNCTIONAL DESCRIPTION Read Mode The MBM29F200TC/BC has two control functions which must be satisfied in order to obtain data at the outputs the power control and should be used for a device selection the output control and should be used to gate data to the output pins if a device is selected. ...
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... protected. “Sector Address Table (MBM29F200TC) ” and “Sector Address Table (MBM29F200BC) ” in “ FLEXIBLE SECTOR-ERASE ARCHITECTURE” define the sector address for each of the seven (7) individual sectors. Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector addresses must be held constant during the WE pulse. Refer to “ ...
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... Following the command write, a read cycle from address XX00h retrieves the manufacture code of 04h. A read cycle from address XX01h for 16 (XX02h for 8) returns the device code (MBM29F200TC = 51h and MBM29F200BC = 57h for 8 mode; MBM29F200TC = 2251h and MBM29F200BC = 2257h for 16 mode). (See “ ...
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... WE. After time-out of 50 µs from the rising edge of the last sector erase command, the sector erase operation will begin. Multiple sectors may be erased concurrently by writing the six bus cycle operations on “MBM29F200TC/BC Command Definitions Table” in “ FLEXIBLE SECTOR-ERASE ARCHITECTURE”. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than 50 µ ...
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... MBM29F200TC during the Sector Erase time-out results in immediate termination of the time-out period and suspension of the erase operation. Writing the Erase Resume command resumes the erase operation. The addresses are “don’t cares” when writing the Erase Suspend or Erase Resume command. ...
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... DQ 6 Toggle Bit I The MBM29F200TC/BC also feature the “Toggle Bit I” method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the device will result in DQ toggling between one and zero ...
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... Data Polling is the only operating function of the devices under this condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA). The OE and WE pins will control the output disable functions as described in “MBM29F200TC/BC User Bus Operation Table (BYTE V ) ” ...
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... When the RY/BY pin is low, the device will not accept any additional program or erase commands. If the MBM29F200TC/BC is placed in an Erase Suspend mode, the RY/BY output will be high. Also, since this is an open drain output, many RY/BY pins can be tied together in parallel with a pull up resistor to V During programming, the RY/BY pin is driven low after the rising edge of the fourth write pulse ...
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... MBM29F200TC Low V Write Inhibit CC To avoid initiation of a write cycle during V than 3.2 V (typically 3.7 V are disabled. Under this condition the device will reset to the read mode. Subsequent writes will be ignored until the V level is greater than V CC LKO to prevent unintentional writes when V If Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) cannot be used. Write Pulse “ ...
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... Ambient Temperatue MBM29F200TC/BC-70/-90 MBM29F200TC/BC-55 Power Supply Voltage* MBM29F200TC/BC-70/- Voltage is defined on the basis of V Note : Operating ranges define those limits between which the functionality of the devices are guaranteed. WARNING: The recommended operating conditions are required in order to ensure the normal operating ranges for the semiconductor device. All of the device’s electrical characteristics are warranted whent the device is operated within these ranges ...
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... MBM29F200TC MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT 1. Maximum Undershoot Waveform +0.8 V –0.5 V –2 Maximum Overshoot Waveform Maximum Overshoot Waveform +14.0 V +13 +0 Note : This waveform is applied for A 20 /MBM29F200BC -55/70/ and RESET. 9 -55/70/ ...
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... MBM29F200TC DC CHARACTERISTICS Description Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current V Active Current * Active Current * Current (Standby Current (Standby, Reset) CC Input Low Level Input High Level Voltage for Autoselect and Sector Protection (A , OE, RESET ...
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... MBM29F200TC AC CHARACTERISTICS • Read Only Operations Characteristics Description Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses OE, Whichever Occurs First RESET Pin Low to Read Mode ...
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... RiseTime Voltage Transition Time * 2 Write Pulse Width * Setup Time to WE Active * CE Setup Time to WE Active * 2 Recover Time from RY/BY /MBM29F200BC -55/70/90 Symbol MBM29F200TC/BC -55 JEDEC Standard Min Typ Max Min Typ Max Min Typ Max — — AVAV — ...
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... RH — t — — FLQZ — t — — FHQV — t — — BUSY — t — — EOE -55/70/90 MBM29F200TC/BC -70 -90 Typ Max — 500 — — 500 — — — 50 — — 50 — — 30 — — 30 — — — — ...
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... MBM29F200TC ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Erase/Program Cycle TSOP (1) PIN CAPACITANCE Parameter Parameter Description Symbol C Input Capacitance IN C Output Capacitance OUT C Control Pin Capacitance IN2 Note : Test conditions T = 25° 1.0 MHz ...
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... MBM29F200TC TIMING DIAGRAM • Key to Switching Waveforms (1) AC Waveforms for Read Operations Address Outputs 26 /MBM29F200BC -55/70/90 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from May Will Be Change Changing from from “H” or “L” ...
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... MBM29F200TC (2) AC Waveforms for Hardware Reset/Read Operations Address t RH RESET High-Z Outputs (3) Alternate WE Controlled Program Operation Timings 3rd Bus Cycle Address 555h GHWL WE A0h Data t DS Notes : PA is address of the memory location to be programmed PD is data to be programmed at byte address. ...
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... MBM29F200TC (4) Alternate CE Controlled Program Operation Timings Address GHEL CE Data Notes : PA is address of the memory location to be programmed data to be programmed at byte address the output of the complement of the data written to the device the output of the data written to the device. ...
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... MBM29F200TC (5) AC Waveforms Chip/Sector Erase Operations Address 555h GHWL AAh Data t VCS V CC Notes : SA is the sector address for Sector Erase. Addresses = 555h (Word), AAAh (Byte) for Chip Erase. These waveforms are for the /MBM29F200BC -55/70/90 2AAh ...
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... MBM29F200TC (6) AC Waveforms for Data Polling during Embedded Algorithm Operations Data 7 Data Valid Data (The device has completed the Embedded operation). 7 (7) AC Waveforms for Toggle Bit I during Embedded Algorithm Operations CE t OEH WE t OES OE Data ...
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... MBM29F200TC (8) RY/BY Timing Diagram during Program/Erase Operations CE WE RY/BY (9) RESET/RY/BY Timing Diagram WE RESET RY/BY (10) Timing Diagram for Word Mode Configuration CE BYTE ELFH /MBM29F200BC -55/70/90 Rising edge of the last WE signal Entire programming or erase operations t BUSY READY Data Output Data Output ...
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... MBM29F200TC (11) Timing Diagram for Byte Mode Configuration CE BYTE t ELFL (12) BYTE Timing Diagram for Write Operations BYTE 32 /MBM29F200BC -55/70/90 Data Output Data Output ( ( FLQZ Falling edge of the last write pulse Input Valid t HOLD ...
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... MBM29F200TC (13) AC Waveforms Sector Protection Timing Diagram SAX VLHT VLHT WE t CSP CE Data t VLHT V CC SAX = Sector Address for initial sector SAY = Sector Address for next sector ...
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... MBM29F200TC (14) Temporary Sector Unprotection VCS RESET CE WE RY/BY (15 Enter Erase Embedded Suspend Erasing WE Erase Erase Suspend Toggle DQ and with read from the erase-suspended sector /MBM29F200BC -55/70/90 t VIDR t Program or Erase Command Sequence ...
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... MBM29F200TC FLOW CHART (1) Embedded Programming Algorithm EMBEDDED ALGORITHMS Increment Address * : The sequence is applied for The addresses differ from /MBM29F200BC -55/70/90 Start Write Program Command Sequence (See Below) Data Polling Device No Last Address ? Yes Programming Completed Program Command Sequence* (Address/Command): 555h/AAh 2AAh/55h 555h/A0h Program Address/Program Data 16 mode ...
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... MBM29F200TC (2) Embedded Erase Algorithm EMBEDDED ALGORITHMS Chip Erase Command Sequence The sequence is applied for The addresses differ from 36 /MBM29F200BC -55/70/90 Start Write Erase Command Sequence (See Below) Data Polling or Toggle Bit Successfully Completed Erasure Completed Individual Sector/Multiple Sector* Erase Command Sequence (Address/Command): ...
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... MBM29F200TC (3) Data Polling Algorithm No Note : DQ is rechecked even /MBM29F200BC -55/70/90 Start Read Byte ( Addr Yes DQ = Data Byte address for programming No = Any of the sector addresses within the sector being erased during sector erase operation = Any of the sector addresses ...
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... MBM29F200TC (4) Toggle Bit Algorithm *1 : Read toggle bit twice to determine whether it is toggling rechecked even changing to “1” /MBM29F200BC -55/70/90 Start *1 Read ( Addr. = “H” or “L” *1 Read ( Addr. = “H” or “L” Toggle ...
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... MBM29F200TC (5) Sector Protection Algorithm Increment PLSCNT No PLSCNT = 25? Yes Remove V ID Write Reset Command Device Failed * : byte mode /MBM29F200BC -55/70/90 Start Setup Sector Addr 16 PLSCNT = RESET = ...
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... MBM29F200TC (6) Temporary Sector Unprotection Algorithm *1 : All protected sectors unprotected All previously protected sectors are protected once again. 40 /MBM29F200BC -55/70/90 Start RESET = Perform Erase or Program Operations RESET = V IH Temporary Sector Unprotection Completed* 2 -55/70/90 ...
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... MBM29F200TC ORDERING INFORMATION Part No. MBM29F200TC-55PF 44-pin plastic SOP MBM29F200TC-70PF (FPT-44P-M16) MBM29F200TC-90PF MBM29F200TC-55PFTN 48-pin plastic TSOP (1) MBM29F200TC-70PFTN (FPT-48P-M19) MBM29F200TC-90PFTN Normal Bend MBM29F200TC-55PFTR 48-pin plastic TSOP (1) MBM29F200TC-70PFTR (FPT-48P-M20) MBM29F200TC-90PFTR Reverse Bend MBM29F200BC-55PF 44-pin plastic SOP MBM29F200BC-70PF (FPT-44P-M16) MBM29F200BC-90PF MBM29F200BC-55PFTN 48-pin plastic TSOP (1) MBM29F200BC-70PFTN ...
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... MBM29F200TC PACKAGE DIMENSIONS Note Values do not include resin protrusion. 48-pin plastic TSOP (1) (FPT-48P-M19) Note 2) Pins width and pins thickness include plating thickness. Note 3) Pins width do not include tie bar cutting remainder. LEAD No. 1 INDEX 24 20.00 (.787 * 18.40 (.724 "A" 0.10(.004) 2003 FUJITSU LIMITED F48029S-c-6-7 ...
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... MBM29F200TC Note Values do not include resin protrusion. 48-pin plastic TSOP (1) (FPT-48P-M20) Note 2) Pins width and pins thickness include plating thickness. Note 3) Pins width do not include tie bar cutting remainder. LEAD No. 1 INDEX 24 0.10(.004) "A" * 18.40 ± 0.20 (.724 ± .008) 20.00 ± 0.20 (.787 ± ...
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... MBM29F200TC (Continued) 44-pin plastic SOP (FPT-44P-M16) +0. 28.45 1.120 –0.20 44 INDEX 1 1.27(.050) 0.42 .017 0.10(.004) 2002 FUJITSU LIMITED F44023S-c-6 /MBM29F200BC -55/70/90 Note These dimensions include resin protrusion. Note These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. ...
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... MBM29F200TC -55/70/90 FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device ...