AO3400 Alpha & Omega Semiconductor, AO3400 Datasheet
AO3400
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AO3400 Summary of contents
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... AO3400 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400/L uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.AO3400 and AO3400L are electrically identical ...
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... AO3400 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO3400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 10V (Volts) DS Fig 1: On-Region Characteristics =2. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 125° 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...
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... AO3400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =15V (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA θJA R =90°C/W θ ...