CLC5623IN National Semiconductor, CLC5623IN Datasheet - Page 3

• Manufacturer Part Number: CLC5623IN
• Description: IC AMP VIDEO TRIPLE 14-DIP
• Manufacturer: National Semiconductor

Specifications of CLC5623IN

• Applications: Current Feedback
• Number Of Circuits: 3
• -3db Bandwidth: 148MHz
• Slew Rate: 370 V/µs
• Current - Supply: 3.2mA
• Current - Output / Channel: 130mA
• Mounting Type: Through Hole
• Package / Case: 14-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *CLC5623IN

Ambient Temperature
Frequency Domain Response
Time Domain Response
Distortion And Noise Response
Static, DC Performance
Symbol
(A
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (V
Output Current (Note 4)
Common-Mode Input Voltage
Maximum Junction Temperature
Storage Temperature Range
+5 Electrical Characteristics
V
= +2, R
-3dB Bandwidth
−0.1dB Bandwidth
Gain Peaking
Gain Rolloff
Linear Phase Deviation
Differential Gain
Differential Phase
Rise and Fall Time
Settling Time to 0.05%
Overshoot
Slew Rate
2nd Harmonic Distortion
3rd Harmonic Distortion
Equivalent Input Noise
Crosstalk (Input Referred)
Crosstalk, All Hostile (Input
Referred)
Input Offset Voltage (Note 3)
Input Bias Current
(Non-Inverting) (Note 3)
Input Bias Current (Inverting)
(Note 3)
f
voltage (e
non-inverting current (i
inverting current (i
Average Drift
Average Drift
= 750 , R
CC
-V
Parameter
ni
EE
f
)
= 1k
)
bn
(PDIP), R
)
bn
)
f
= 750
−65˚C to +150˚C
CLC5623IN
V
V
NTSC, R
NTSC, R
2V Step
1V Step
2V Step
2V Step
2V
2V
2V
2V
2V
2V
10MHz, 1V
10MHz, 1V
<
<
<
>
>
>
(Note 1)
O
O
200MHz, V
30MHz, V
30MHz, V
1MHz
1MHz
1MHz
PP
PP
PP
PP
PP
PP
V
= 1.5V
= 0.5V
EE
(SOIC), V
, 1MHz
, 1MHz; R
, 5MHz
, 1MHz
, 1MHz; R
, 5MHz
+150˚C
Conditions
140mA
to V
+14V
L
L
PP
PP
= 150
= 150
PP
PP
CC
O
O
O
= 0.5V
= 0.5V
S
= 0.5V
L
L
= +5V
3
= 1K
= 1K
to −1V
to −1V
Lead Temperature (soldering 10 sec)
Operating Ratings
Package
MDIP
SOIC
PP
PP
PP
1
Thermal Resistance
, V
CM
= V
+25˚C
0.03
0.08
11.1
Typ
−76
−85
−63
−88
−96
−65
−51
−49
107
280
0.3
1.0
4.5
4.9
6.6
14
17
11
40
0
1
8
6
6
EE
+ (V
S
+25˚C
/2), R
Min/Max Ratings (Note 2)
14.7
195
−58
−62
0.5
0.7
2.0
6.0
5.9
8.5
85
13
25
15
18
14
–
–
–
–
4
-
-
-
-
L
60˚C/W
55˚C/W
tied to V
(
JC
70˚C
15.8
0 to
165
−56
−60
0.9
0.8
2.4
6.4
6.4
9.3
)
75
10
40
18
22
16
–
–
–
–
6
-
-
-
-
CM
, unless specified)
−40 to
85˚C
15.8
150
−56
−60
0.9
0.8
2.4
6.4
9.3
6.8
75
10
24
17
60
18
–
–
–
–
6
-
-
-
-
www.national.com
110˚C/W
125˚C/W
(
JA
+300˚C
nV/
pA/
pA/
µV/˚C
nA/˚C
Units
MHz
MHz
V/µs
)
dBc
dBc
dBc
dBc
dBc
dBc
deg
deg
mV
dB
dB
dB
dB
µA
µA
ns
ns
%
%