BLF7G27L-90P NXP Semiconductors, BLF7G27L-90P Datasheet - Page 10

90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz

BLF7G27L-90P

Manufacturer Part Number
BLF7G27L-90P
Description
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
Fig 16. Package outline SOT1121B
BLF7G27L-90P_BLF7G27LS-90P
Product data sheet
Earless flanged LDMOST ceramic package; 4 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
mm
Unit
SOT1121B
Outline
version
(1)
max
nom
max
nom
min
min
0.187
0.136
4.75
3.45
A
H
A
U
0.155
0.145
3.94
3.68
2
b
0.007
0.003
0.18
0.08
IEC
c
20.02
19.61
0.788
0.772
D
1
3
19.96
19.66
0.786
0.774
D
1
JEDEC
8.89
0.35
All information provided in this document is subject to legal disclaimers.
e
0.375
0.365
BLF7G27L-90P; BLF7G27LS-90P
D
U
H
9.53
9.27
D
e
References
1
1
1
E
Rev. 2 — 10 November 2011
0.375
0.365
0
9.53
9.27
E
1
0.045
0.035
b
1.14
0.89
JEITA
F
2
4
scale
19.94
18.92
0.785
0.745
5
H
5
12.83
12.57
w
0.505
0.495
H
3
1
10 mm
0.067
0.057
D
1.70
1.45
Q
w
2
20.70
20.45
0.815
0.805
F
U
1
D
9.91
9.65
0.39
0.38
U
2
0.51
0.02
w
European
projection
2
E
0.25
0.01
Power LDMOS transistor
w
1
3
Q
© NXP B.V. 2011. All rights reserved.
c
Issue date
09-10-12
09-12-14
sot1121b_po
E
SOT1121B
10 of 14

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