LM393M/NOPB National Semiconductor, LM393M/NOPB Datasheet - Page 4

• Manufacturer Part Number: LM393M/NOPB
• Description: IC COMP DUAL LO PWR 8-SOIC
• Manufacturer: National Semiconductor
• Type: General Purposer

Specifications of LM393M/NOPB

• Number Of Elements: 2
• Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
• Voltage - Supply: 2 V ~ 36 V, ±1 V ~ 18 V
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Amplifier Type: Comparator
• Current, Input Bias: 25 nA
• Current, Input Offset: 5 nA
• Current, Output: 16 mA
• Current, Supply: 1 mA
• Number Of Amplifiers: Dual
• Package Type: SOIC-8
• Power Dissipation: 510 mW
• Temperature, Operating, Range: 0 to +70 °C
• Voltage, Gain: 200 V/mV
• Voltage, Input: -0.3 to +36 V
• Voltage, Input Offset: 1 mV
• Voltage, Supply: ±1 to ±18 V
• Comparator Type: Precision
• No. Of Comparators: 2
• Response Time: 1.3µs
• Ic Output Type: CMOS, MOS, TTL, DTL, ECL
• Supply Current: 1mA
• Supply Voltage Range: ± 1V To ± 18V
• Amplifier Case Style: SOIC
• Rohs Compliant: Yes
• Output Compatibility: CMOS, DTL, ECL, MOS, TTL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *LM393M; *LM393M/NOPB; LM393MNS

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Supply Current
Voltage Gain
Large Signal Response
Time
Response Time
Output Sink Current
Saturation Voltage
Output Leakage Current
Input Offset Voltage
Input Offset Current
Input Bias Current
Input Common Mode
Voltage Range
Saturation Voltage
Output Leakage Current
Differential Input Voltage
Electrical Characteristics
(V
Electrical Characteristics
Input Offset Voltage
Input Offset Current
Input Bias Current
Input Common Mode
Voltage Range
Saturation Voltage
Output Leakage Current
Differential Input Voltage
Electrical Characteristics
(V+ = 5V) (Note 4)
Note 1: For operating at high temperatures, the LM393 and LM2903 must be derated based on a 125˚C maximum junction temperature and a thermal resistance
of 170˚C/W which applies for the device soldered in a printed circuit board, operating in a still air ambient. The LM193/LM193A/LM293 must be derated based on
a 150˚C maximum junction temperature. The low bias dissipation and the “ON-OFF” characteristic of the outputs keeps the chip dissipation very small (P
provided the output transistors are allowed to saturate.
Note 2: Short circuits from the output to V
current is approximately 20 mA independent of the magnitude of V
Note 3: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP
transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action
(V+ = 5V) (Note 4)
+
=5V, T
Parameter
Parameter
Parameter
A
= 25˚C, unless otherwise stated)
R
R
V
V
V
V
V
V
V
(Note 9)
I
I
Linear Range, V
(Note 5)
V
V
I
V
Keep All V
Used), (Note 8)
IN(+)
IN
SINK
O
IN
RL
RL
IN
IN
IN
L
L
+
IN
IN
≥15 kΩ, V
=
(+) or I
(−)=1V, V
(−)=1V, V
(−)=0, V
=30V (Note 6)
=TTL Logic Swing, V
= 1V to 11V
=5V, R
=5V, R
(−)=1V, V
(−)=0, V
∞
−I
≤4 mA
IN(−)
+
can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output
IN
(Note 9)
I
I
V
V
V
V
Keep All V
L
L
Conditions
IN(+)
IN
, V
IN
(−) with Output in
IN
=5.1 kΩ
=5.1 kΩ (Note 7)
CM
+
IN
IN
IN(+)
+
(+) or I
’s≥0V (or V
V
V
IN
IN
=30V (Note 6)
Conditions
(+)=1V, V
(−)=1V, V
(−)=0, V
IN
=15V
CM
+
+
(+)=0, V
(+)=0, I
=0V (Note 5)
−I
(+)=0,
=5V
=36V
=1V, V
=0V
IN(−)
CM
(Continued)
IN
=0V
, V
IN
(−) with Output in Linear Range,
IN(+)
SINK
’s≥0V (or V
O
O
O
IN
CM
−
REF
≤1.5V
=5V
=30V
, if
(+)=0, I
=1V, V
≤4 mA
=0V
+
Conditions
=1.4V
.
SINK
O
−
=30V
Min Typ
, if Used), (Note 8)
0
≤4 mA
4
Min Typ
LM193
6.0
50 200
LM193
300
250
0.4
1.3
0.1
V
16
1
Max
+
100
300
700
1.0
36
−2.0
9
Max
400
2.5
1
Min Typ
LM293, LM393
0
Min Typ
6.0
50 200
LM293, LM393
Min
0
300
250
0.4
1.3
0.1
16
1
V
Max
+
150
400
700
1.0
36
−2.0
9
Max
400
LM193A
2.5
1
Typ
Min Typ
0
Min Typ
6.0
25 100
LM2903
200
400
50
V
9
LM2903
+
300
250
0.4
1.5
0.1
Max
16
100
300
700
−2.0
4.0
1.0
1
36
V
Max
+
200
500
700
1.0
15
36
−2.0
Max
400
1.0
2.5
D
≤100 mW),
Units
mV
mV
nA
nA
µA
Units
V
V
Units
V/mV
mV
mV
nA
nA
µA
mA
mA
mA
mV
nA
ns
µs
V
V