STM8L162R8 STMicroelectronics, STM8L162R8 Datasheet - Page 85

• Manufacturer Part Number: STM8L162R8
• Description: STM8L-Ultra Low Power-8 bits Microcontrollers
• Manufacturer: STMicroelectronics

Specifications of STM8L162R8

• Operating Power Supply: 1.65 to 3.6 V (without BOR), 1.8 to 3.6 V (with BOR)
• Temperature Range: − 40 to 85 or 125 °C
• 5 Low Power Modes: Wait, Low power run, Low power wait, Active-halt with RTC, Halt
• Ultralow Leakage Per I/0: 50 nA
• Fast Wakeup From Halt: 5 μs
• Max Freq: 16 MHz, 16 CISC MIPS peak
• Lcd: 8x40 or 4x44 w/ step-up converter

STM8L162R8, STM8L162M8
Figure 17. HSE oscillator circuit diagram
Table 31.
1. C=
2. The oscillator selection can be optimized in terms of supply current using a high quality resonator with a small R
3. Guaranteed by design. Not tested in production.
4.
t
SU(LSE)
Symbol
R
L
C
I
DD(LSE)
m
C
m
m
Refer to crystal manufacturer for more details.
This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.
f
t
Resonator
LSE
R
(1)(2)
g
SU(LSE)
m
C
F
L1
C
(4)
=
O
C
L2
is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation.
Low speed external oscillator
frequency
Feedback resistor
Recommended load capacitance
LSE oscillator power consumption
Oscillator transconductance
Startup time
is approximately equivalent to 2 x crystal C
HSE oscillator critical g
R
C
C
g
LSE crystal/ceramic resonator oscillator
The LSE clock can be supplied with a 32.768 kHz crystal/ceramic resonator oscillator. All
the information given in this paragraph is based on characterization results with specified
typical external components. In the application, the resonator and the load capacitors have
to be placed as close as possible to the oscillator pins in order to minimize output distortion
and startup stabilization time. Refer to the crystal resonator manufacturer for more details
(frequency, package, accuracy...).
LSE oscillator characteristics
g
m
m
m
L1
mcrit
: Motional resistance (see crystal specification), L
: Motional capacitance (see crystal specification), Co: Shunt capacitance (see crystal specification),
>> g
=C
L2
mcrit
=C: Grounded external capacitance
=

2 
Parameter

C
C

L1
L2
f
HSE

2
Resonator

R
m
m
formula

2Co
OSC_IN
OSC_OUT
Doc ID 17959 Rev 2
+
LOAD
V
C
V = 200 mV
DD
V
V
Conditions

V
m
2
DD
DD
.
: Motional inductance (see crystal specification),
DD
is stabilized
= 1.8 V
= 3.6 V
= 3 V
R
g
F
m
Min.
3
(3)
Consumption
32.768
control
Typ.
450
600
750
1.2
8
1
f
HSE
to core
Electrical parameters
Max.
STM8
m
value.
85/121
µA/V
Unit
kHz
M
nA
pF
s