STM8L162R8 STMicroelectronics, STM8L162R8 Datasheet - Page 89

• Manufacturer Part Number: STM8L162R8
• Description: STM8L-Ultra Low Power-8 bits Microcontrollers
• Manufacturer: STMicroelectronics

Specifications of STM8L162R8

• Operating Power Supply: 1.65 to 3.6 V (without BOR), 1.8 to 3.6 V (with BOR)
• Temperature Range: − 40 to 85 or 125 °C
• 5 Low Power Modes: Wait, Low power run, Low power wait, Active-halt with RTC, Halt
• Ultralow Leakage Per I/0: 50 nA
• Fast Wakeup From Halt: 5 μs
• Max Freq: 16 MHz, 16 CISC MIPS peak
• Lcd: 8x40 or 4x44 w/ step-up converter

STM8L162R8, STM8L162M8
Table 35.
1. Data based on characterization results, not tested in production.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
4. Data based on characterization performed on the whole data memory.
Symbol
N
t
RET
V
t
I
RW
prog
prog
addresses a single byte.
DD
(2)
(3)
Operating voltage
(all modes, read/write/erase)
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
Programming time for 1 to 128 bytes (block)
write cycles (on erased byte)
Programming/ erasing consumption
Data retention (program memory) after 10000
erase/write cycles at T
(6 suffix)
Data retention (program memory) after 10000
erase/write cycles at T
(3 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(6 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(3 suffix)
Erase/write cycles (program memory)
Erase/write cycles (data memory)
Flash program and data EEPROM memory
Flash memory
Parameter
A
A
A
A
+85 °C
+125 °C
+85 °C
+125 °C
Doc ID 17959 Rev 2
T
T
A
A
+25 °C, V
+25 °C, V
T
T
f
T
SYSCLK
A
A
A
T
T
+105 °C
+125 °C
T
T
+85 °C
RET
RET
Conditions
(7 suffix) or
RET
RET
(6 suffix),
(3 suffix)
+125 °C
+125 °C
+85 °C
+85 °C
= 16 MHz
DD
DD
= 3.0 V
= 1.8 V
300
30
30
10
Min.
1.65
5
5
(4)
(1)
(1)
(1)
(1)
(1)
(1)
Electrical parameters
Typ.
0.7
6
3
Max.
3.6
(1)
kcycles
years
Unit
89/121
mA
ms
ms
V