AP4407GP Advanced Power Electronics Corp., AP4407GP Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP4407GP

Manufacturer Part Number
AP4407GP
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP4407GS.pdf (6 pages)

Specifications of AP4407GP

Vds
-30V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
14
Rds(on) / Max(m?) Vgs@4.5v
23
Qg (nc)
35
Qgs (nc)
5
Qgd (nc)
26
Id(a)
-50
Pd(w)
54
Configuration
Single P
Package
TO-220

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
AP4407GP
Manufacturer:
ST
Quantity:
2 000
▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP4407GP) are
available for low-profile applications.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliat Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
+25
180
S
-30
-50
-32
0.4
54
DS(ON)
G D
DSS
Value
2.3
62
AP4407GS/P
S
TO-263(S)
TO-220(P)
14mΩ
200808192
-30V
-50A
Units
W/℃
℃/W
℃/W
Unit
W
℃
℃
V
V
A
A
A
1

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AP4407GP Summary of contents

Page 1

... The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP4407GP) are available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

AP4407GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current ...

Page 3

T = 200 150 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics - = ...

Page 4

AP4407GS -24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 =25 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 Part Marking Information & Packing : TO-263 XXXXXS 4407GS YWWSSS YWWSSS θ θ Part Number Part Number Package Code Package Code LOGO ...

Page 6

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E E1 φ Part Marking Information & Packing : TO-220 4407GP LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM A 4.40 4.60 b 0.76 0. 8.60 8.80 c 0.36 0.43 E 9.80 10.10 L4 14.70 15.00 L5 6.20 6.40 D1 5.10 REF. c1 1.25 1.35 b1 1.17 1.32 L 13.25 13.75 e 2.54 REF. ...

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