AP4407GP Advanced Power Electronics Corp., AP4407GP Datasheet - Page 4

• Manufacturer Part Number: AP4407GP
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4407GP

• Vds: -30V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 14
• Rds(on) / Max(m?) Vgs@4.5v: 23
• Qg (nc): 35
• Qgs (nc): 5
• Qgd (nc): 26
• Id(a): -50
• Pd(w): 54
• Configuration: Single P
• Package: TO-220

AP4407GS/P
1000
100
10
14
12
10
1
8
6
4
2
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
10%
90%
V
V
GS
Single Pulse
DS
V
I
T
D
DS
C
-V
= - 24 A
Q
=25
= -24V
DS
G
20
t
o
, Total Gate Charge (nC)
d(on)
, Drain-to-Source Voltage (V)
C
1
t
r
40
10
t
d(off)
60
t
100ms
100us
10ms
f
1ms
DC
100
80
Fig 10. Effective Transient Thermal Impedance
10000
1000
100
0.01
0.1
0.00001
1
Fig 8. Typical Capacitance Characteristics
1
Fig 12. Gate Charge Waveform
-4.5V
V
Duty factor=0.5
0.02
G
5
0.05
0.01
0.2
0.1
Single Pulse
0.0001
-V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
0.1
DM
f=1.0MHz
T
x R
25
thjc
+ T
C
Q
C
C
C
rss
oss
iss
1
29
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