AP4407GP Advanced Power Electronics Corp., AP4407GP Datasheet - Page 3

• Manufacturer Part Number: AP4407GP
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4407GP

• Vds: -30V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 14
• Rds(on) / Max(m?) Vgs@4.5v: 23
• Qg (nc): 35
• Qgs (nc): 5
• Qgd (nc): 26
• Id(a): -50
• Pd(w): 54
• Configuration: Single P
• Package: TO-220

250
200
150
100
50
30
20
10
25
20
15
10
0
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
=25
1
T
0.2
-V
-V
j
-V
=150
Reverse Diode
o
DS
GS
C
SD
2
4
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
0.4
, Source-to-Drain Voltage (V)
o
C
3
0.6
4
6
0.8
5
I
T
D
T
1
C
= -16 A
6
8
j
=25
=25
V
G
=-3.0V
℃
-8.0V
-6.0V
-4.5V
o
1.2
-10V
C
7
10
1.4
8
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
3.0
2.5
2.0
1.5
1.0
0.5
0
-50
0
-50
Fig 6. Gate Threshold Voltage v.s.
T
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
C
V
=150
I
D
1
G
=-24A
=-10V
-V
T
Junction Temperature
v.s. Junction Temperature
o
j
DS
C
T
, Junction Temperature (
2
0
0
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
3
50
50
4
AP4407GS/P
5
o
100
100
C)
6
V
o
C)
G
=-3.0V
-8.0V
-6.0V
-4.5V
-10V
7
150
150
8
3