Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost- effectiveness

AP4502AGM-HF

Manufacturer Part NumberAP4502AGM-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost- effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4502AGM-HF datasheet
 

Specifications of AP4502AGM-HF

Vds20VVgs±12V
Rds(on) / Max(m?) Vgs@4.5v18Rds(on) / Max(m?) Vgs@2.5v30
Qg (nc)8Qgs (nc)1
Qgd (nc)4Id(a)8.5
Pd(w)2ConfigurationComplementary N-P
PackageSO-8  
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design,low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
D2
D1
D1
G2
S2
G1
SO-8
S1
N-channel
3
3
1
Parameter
3
AP4502AGM-HF
Halogen-Free Product
N-CH BV
20V
DSS
R
18mΩ
DS(ON)
I
8.5A
D
P-CH BV
-20V
DSS
R
60mΩ
DS(ON)
I
-4.5A
D
D1
G2
G1
S1
Rating
Units
P-channel
20
-20
+12
+12
8.5
-4.5
6.8
-3.6
30
-20
2.0
-55 to 150
-55 to 150
Value
Unit
62.5
℃/W
200906171
D2
S2
V
V
A
A
A
W
1

AP4502AGM-HF Summary of contents

  • Page 1

    ... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 N-channel Parameter 3 AP4502AGM-HF Halogen-Free Product N-CH BV 20V DSS R 18mΩ DS(ON) I 8.5A D P-CH BV -20V DSS R 60mΩ DS(ON) I -4. ...

  • Page 2

    ... AP4502AGM-HF N-CH Electrical Characteristics@ T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

  • Page 3

    ... DS V =+12V =- =-10V DS V =-4. =-10V =3.3Ω, =10Ω = =-20V DS f=1.0MHz Test Conditions 2 I =-1.7A =-4A dI/dt=-100A/µs AP4502AGM-HF Min. Typ. - =-250uA -0 1 780 - ...

  • Page 4

    ... AP4502AGM-HF N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

  • Page 5

    ... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 0.05 0.02 10ms 0.01 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance V 4. d(off) f Fig 12. Gate Charge Waveform AP4502AGM-HF f=1.0MHz C iss C oss C rss Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0 Single Pulse t T Duty factor = t/T ...

  • Page 6

    ... AP4502AGM-HF P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 7

    ... Fig 8. Typical Capacitance Characteristics 1 Duty factor=0.5 100us 1ms 10ms 0.1 100ms 1s 0.02 0.01 DC 0.01 10 100 0.001 Fig 10. Effective Transient Thermal Impedance -4. d(off) f Fig 12. Gate Charge Waveform AP4502AGM-HF f=1.0MHz Drain-to-Source Voltage (V) DS 0.2 0.1 0. Single Pulse Duty factor = t/T Peak ...