AP4502GM Advanced Power Electronics Corp., AP4502GM Datasheet - Page 4

• Manufacturer Part Number: AP4502GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4502GM

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 16
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Rds(on) / Max(m?) Vgs@2.5v: 30
• Qg (nc): 22
• Qgs (nc): 3
• Qgd (nc): 9
• Id(a): 8.3
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
AP4502GM
30
20
10
34
30
26
22
18
14
10
10
0
8
6
4
2
0
0
1
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
V
T
Reverse Diode
V
DS
SD
j
GS
=150
2
, Drain-to-Source Voltage (V)
0.4
, Source-to-Drain Voltage (V)
T
, Gate-to-Source Voltage (V)
A
1
o
=25
C
0.6
℃
3
T
I
0.8
A
D
T
= 25
= 5.2A
j
=25
2
o
1
C
o
C
4
V
G
1.2
= 2.0 V
5.0V
4.5V
3.5V
2.5V
1.4
3
5
2.0
1.6
1.2
0.8
0.4
0.0
30
20
10
1.8
1.4
1.0
0.6
0
-50
0
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
30
D
G
=8.3A
=10V
V
T
v.s. Junction Temperature
Junction Temperature
T
j
DS
j
1
, Junction Temperature (
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
-30
2
50
50
T
A
=150
℃
o
3
100
100
o
C)
C)
V
G
=2.0V
5.0V
4.5V
3.5V
2.5V
4
150
150
4