AP4455GEH-HF Advanced Power Electronics Corp., AP4455GEH-HF Datasheet
AP4455GEH-HF
Specifications of AP4455GEH-HF
Related parts for AP4455GEH-HF
AP4455GEH-HF Summary of contents
Page 1
... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter AP4455GEH-HF Halogen-Free Product BV -30V D DSS R 21m DS(ON) I -35A TO-252(H) S Rating ...
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... AP4455GEH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... =-10V G 1.4 1.0 0 Fig 4. Normalized On-Resistance 1 -250uA D 1 0.8 0.4 0 -50 1.2 1.4 Fig 6. On-Resistance vs. Fig 6. Gate Threshold Voltage v.s. AP4455GEH-HF o -10V C -7.0V -6.0V -5. 4. Drain-to-Source Voltage ( 100 125 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...
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... AP4455GEH- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 40 30 ...