AP4455GEH-HF Advanced Power Electronics Corp., AP4455GEH-HF Datasheet - Page 3

• Manufacturer Part Number: AP4455GEH-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4455GEH-HF

• Vds: -30V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 21
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 19
• Qgs (nc): 3.5
• Qgd (nc): 11.5
• Id(a): -35
• Pd(w): 39
• Configuration: Single P
• Package: TO-252

100
80
60
40
20
20
15
10
30
26
22
18
14
10
0
5
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
-V
Reverse Diode
-V
-V
SD
4
2
DS
GS
0.4
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T
j
=150
0.6
6
4
o
C
T
I
T
0.8
C
D
C
= 25
= - 18 A
=25 ℃ ℃ ℃ ℃
o
C
1
T
8
6
j
V
=25
G
1.2
= - 4.0V
o
-7.0V
-6.0V
-5.0V
C
-10V
1.4
10
8
1.8
1.4
1.0
0.6
1.6
1.2
0.8
0.4
80
60
40
20
0
0
25
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. On-Resistance vs.
I
Fig 6. Gate Threshold Voltage v.s.
T
I
V
D
D
C
= -250uA
G
= -24 A
= 150
=-10V
v.s. Junction Temperature
50
Junction Temperature
o
T
-V
T
C
2
0
j
j
, Junction Temperature (
DS
, Junction Temperature (
, Drain-to-Source Voltage (V)
75
AP4455GEH-HF
4
50
100
6
100
o
V
o
C)
125
C)
G
= - 4.0V
-7.0V
-6.0V
-5.0V
-10V
150
8
150
3