AP4455GEH-HF Advanced Power Electronics Corp., AP4455GEH-HF Datasheet - Page 4

• Manufacturer Part Number: AP4455GEH-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4455GEH-HF

• Vds: -30V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 21
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 19
• Qgs (nc): 3.5
• Qgd (nc): 11.5
• Id(a): -35
• Pd(w): 39
• Configuration: Single P
• Package: TO-252

AP4455GEH-HF
1000
100
10
10
1
40
30
20
10
8
6
4
2
0
0
0.1
0
25
Fig 7. Gate Charge Characteristics
Fig 11. Maximum Continuous Drain Current
Fig 9. Maximum Safe Operating Area
I
V
D
Single Pulse
DS
Operation in this
area limited by
= - 18 A
T
R
= - 24 V
DS(ON)
c
=25
-V
50
v.s. Case Temperature
Q
DS
o
T
10
G
C
C
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
, Case Temperature (
1
75
20
100
10
o
30
C )
125
100ms
100us
10ms
1ms
DC
100
150
40
Fig 10. Effective Transient Thermal Impedance
2000
1600
1200
800
400
0.01
0.1
0
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
-4.5V
Fig 12. Gate Charge Waveform
DUTY=0.
0.0
1
SINGLE PULSE
0.0
V
0.0
0.2
0.1
G
5
0.0001
-V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
0.001
t , Pulse Width (s)
13
Q
Q
0.01
Charge
G
GD
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
f=1.0MHz
DM
T
x R
1
25
thjc
C
C
C
Q
+ T
oss
rss
iss
C
29
10
4