AP6950GYT-HF Advanced Power Electronics Corp., AP6950GYT-HF Datasheet

AP6950GYT-HF

Manufacturer Part Number
AP6950GYT-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP6950GYT-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
18
Rds(on) / Max(m?) Vgs@4.5v
30
Qg (nc)
6
Qgs (nc)
2.5
Qgd (nc)
3
Id(a)
21
Pd(w)
1.9
Configuration
Duan N-Channel
Package
PMPAK 3x3
▼ Simple Drive Requirement
▼ Easy for Synchronous Buck
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide
the designer with the best combination of fast
switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The control MOSFET (CH-1) and synchronous
MOSFET (CH-2) co-package for synchronous buck
converters.
D
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
@T
Converter Application
C
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Maximum Thermal Resistance, Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip Limited)
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Parameter
1
3
3
3
G1
G2
G2 S2 S2 S2
G1 D1 D1 D1
3
4
D2/S1
D1
S2
Dual N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
S1/D2
D1
CH-1
CH-1
115
CH-1
CH-2
+20
8.3
6.6
1.9
21
40
10
65
30
Halogen-Free Product
-55 to 150
-55 to 150
Rating
Rating
G1
BV
R
I
BV
R
I
D
D
DS(ON)
DS(ON)
D1
AP6950GYT-HF
DSS
DSS
D1
11.8
CH-2
CH-2
+20
105
D1
9.5
2.2
39
40
55
30
5
PMPAK
G2
S2
10.5mΩ
18mΩ
®
201108183
S2
Units
Units
℃/W
℃/W
℃/W
21A
30V
39A
3 x 3
30V
W
S2
V
V
A
A
A
A
1

Related parts for AP6950GYT-HF

AP6950GYT-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-ambient Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 G1 D2/ S1/ Parameter 3 4 AP6950GYT-HF Halogen-Free Product CH-1 BV DSS R 18mΩ DS(ON CH-2 BV DSS R 10.5mΩ DS(ON ...

Page 2

... AP6950GYT-HF CH-1 Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... GS I =11A D V =15V DS V =4. =15V =3.3Ω =10V =15V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =11A =11A dI/dt=100A/µs AP6950GYT-HF Min. Typ 13 970 - 120 - 80 - 1.2 Min. Typ. ...

Page 4

... Fig 2. Typical Output Characteristics 2.0 = 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance 2.0 1 0.8 0.4 0.0 1 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP6950GYT- =150 Drain-to-Source Voltage ( = =10V 100 Junction Temperature ( C) j v.s. Junction Temperature I =250uA ...

Page 5

... AP6950GYT-HF Channel = =15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 40 V =5V DS ...

Page 6

... Fig 2. Typical Output Characteristics 2.0 = 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance 2.0 1 0.8 0.4 0.0 1 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP6950GYT- =150 Drain-to-Source Voltage ( =11A D V =10V 100 Junction Temperature ( C) j v.s. Junction Temperature I =250uA ...

Page 7

... AP6950GYT-HF Channel =11A D V =15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 60 V =5V ...

Related keywords