AP6950GYT-HF Advanced Power Electronics Corp., AP6950GYT-HF Datasheet - Page 2

• Manufacturer Part Number: AP6950GYT-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6950GYT-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 18
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Qg (nc): 6
• Qgs (nc): 2.5
• Qgd (nc): 3
• Id(a): 21
• Pd(w): 1.9
• Configuration: Duan N-Channel
• Package: PMPAK 3x3

BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
AP6950GYT-HF
CH-1 Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
j
=25
2
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
GS
DS
GS
DS
GS
GS
DS
G
o
=8A
=1A
=8A, V
=8A,
=3.3Ω
C(unless otherwise specified)
=0V, I
=10V, I
=4.5V, I
=V
=10V, I
=24V, V
=+20V, V
=15V
=4.5V
=15V
=10V
=0V
=15V
GS
V
Test Conditions
Test Conditions
GS
, I
GS
D
D
=0V
=250uA
D
D
=0
D
=250uA
GS
=8A
=8A
=5A
DS
V
=0V
=0V
,
Min.
Min.
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
23.2
Typ.
450
1.4
4.2
1.8
1.9
6.5
1.2
14
14
15
70
50
13
6
3
6
-
-
-
-
+100
Max. Units
Max. Units
720
6.7
2.4
1.2
18
30
10
3
-
-
-
-
-
-
-
-
-
-
-
-
mΩ
mΩ
uA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
Ω
ns
V
V
S
V
2