AP6950GYT-HF Advanced Power Electronics Corp., AP6950GYT-HF Datasheet - Page 6

• Manufacturer Part Number: AP6950GYT-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6950GYT-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 18
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Qg (nc): 6
• Qgs (nc): 2.5
• Qgd (nc): 3
• Id(a): 21
• Pd(w): 1.9
• Configuration: Duan N-Channel
• Package: PMPAK 3x3

Channel-2
18
16
14
12
10
60
50
40
30
20
10
12
10
0
8
8
6
4
2
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
1
V
Reverse Diode
V
SD
DS
GS
4
, Source-to-Drain Voltage (V)
T
T
, Drain-to-Source Voltage (V)
0.4
, Gate-to-Source Voltage (V)
j
A
=150
=25
2
o
o
0.6
C
C
6
3
I
T
0.8
D
A
=7A
=25
4
o
T
1
C
j
8
=25
V
o
1.2
5
G
C
=4.0V
7.0V
6.0V
5.0V
10V
1.4
10
6
2.0
1.6
1.2
0.8
0.4
2.0
1.6
1.2
0.8
0.4
0.0
60
50
40
30
20
10
0
Fig 4. Normalized On-Resistance
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
V
I
I
D
D
G
=11A
=250uA
=10V
v.s. Junction Temperature
1
Junction Temperature
V
DS
T
T
0
0
j
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
, Junction Temperature (
2
T
A
=150
AP6950GYT-HF
50
3
50
o
C
4
100
100
o
o
C)
V
C)
G
5
=4.0V
7.0V
6.0V
5.0V
10V
150
6
150
6