AP3402GEH Advanced Power Electronics Corp., AP3402GEH Datasheet - Page 3

• Manufacturer Part Number: AP3402GEH
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP3402GEH

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 18
• Rds(on) / Max(m?) Vgs@4.5v: 32
• Qg (nc): 10.5
• Qgs (nc): 4
• Qgd (nc): 6
• Id(a): 38
• Pd(w): 34.7
• Configuration: Single N
• Package: TO-252

100
60
50
40
30
20
10
20
15
10
80
60
40
20
0
5
0
Fig 1. Typical Output Characteristics
2
Fig 3. On-Resistance v.s. Gate Voltage
0
0
Fig 5. Forward Characteristic of
T
C
=25
0.2
1
V
o
V
Reverse Diode
T
DS
C
V
SD
4
j
GS
=150
, Drain-to-Source Voltage (V)
0.4
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
2
o
C
0.6
6
3
0.8
4
T
I
T
1
D
j
C
=25
8
=20A
=25
V
o
5
o
G
C
1.2
C
=3.0V
7.0V
5.0V
4.5V
10V
1.4
10
6
1.5
1.2
0.9
0.6
1.5
1.2
0.9
0.6
0.3
80
60
40
20
0
-50
-50
0
Fig 6. Gate Threshold Voltage v.s.
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
T
C
V
I
=150
D
G
1
=25A
V
=10V
v.s. Junction Temperature
Junction Temperature
T
DS
T
j
o
0
0
j
, Junction Temperature (
C
, Drain-to-Source Voltage (V)
, Junction Temperature (
2
50
50
3
AP3402GEH/J
4
100
100
o
o
C)
V
C)
G
5
=3.0V
7.0V
5.0V
4.5V
10V
150
150
6
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