AP3402GEH Advanced Power Electronics Corp., AP3402GEH Datasheet - Page 4

• Manufacturer Part Number: AP3402GEH
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP3402GEH

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 18
• Rds(on) / Max(m?) Vgs@4.5v: 32
• Qg (nc): 10.5
• Qgs (nc): 4
• Qgd (nc): 6
• Id(a): 38
• Pd(w): 34.7
• Configuration: Single N
• Package: TO-252

AP3402GEH/J
1000
100
10
1
0
14
12
10
50
40
30
20
10
8
6
4
2
0
0
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
I
V
D
DS
=25A
Single Pulse
T
=5V
C
Q
V
V
=25
5
2
G
DS
GS
V
V
V
, Total Gate Charge (nC)
T
o
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
1
DS
DS
DS
C
j
=25
=15V
=20V
=25V
o
C
10
4
10
T
j
=150
15
6
o
C
100ms
100us
10ms
1ms
DC
1s
100
20
8
Fig 10. Effective Transient Thermal Impedance
10000
1000
100
0.01
0.1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
Duty factor=0.5
V
0.01
0.02
0.2
0.05
0.1
G
5
Single Pulse
0.0001
Q
V
GS
DS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
G
Charge
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
0.1
DM
f=1.0MHz
T
x R
25
thjc
C
+ T
Q
C
C
rss
C
oss
iss
29
1
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