Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4511GED-HF

Manufacturer Part NumberAP4511GED-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4511GED-HF datasheet
 


Specifications of AP4511GED-HF

Vds40VVgs±16V
Rds(on) / Max(m?) Vgs@10v28Rds(on) / Max(m?) Vgs@4.5v36
Qg (nc)8.2Qgs (nc)1.5
Qgd (nc)3.6Id(a)6
Pd(w)2ConfigurationComplementary N-P
PackagePDIP-8  
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
D2
D1
D1
G2
S2
PDIP-8
G1
S1
N-channel
3
3
1
Parameter
3
AP4511GED-HF
Halogen-Free Product
N-CH BV
40V
DSS
R
28mΩ
DS(ON)
I
6A
D
P-CH BV
-40V
DSS
R
42mΩ
DS(ON)
I
-5A
D
D1
G1
G2
S1
Rating
Units
P-channel
40
-40
+16
+16
6.0
-5.0
5.0
-4.0
30
-30
2.0
0.016
W/℃
-55 to 150
-55 to 150
Value
Unit
62.5
℃/W
200906014
D2
S2
V
V
A
A
A
W
1

AP4511GED-HF Summary of contents

  • Page 1

    ... Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDIP N-channel Parameter 3 AP4511GED-HF Halogen-Free Product N-CH BV 40V DSS R 28mΩ DS(ON P-CH BV -40V DSS R 42mΩ DS(ON ...

  • Page 2

    ... AP4511GED-HF N-CH Electrical Characteristics@ T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

  • Page 3

    ... D V =-20V DS V =-4. =-20V =3Ω,V =-10V =4Ω = =-20V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.25A =-5A dI/dt=-100A/µs AP4511GED-HF Min. Typ. -40 - =-1mA - -0. -0 ...

  • Page 4

    ... AP4511GED-HF N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 105 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

  • Page 5

    ... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o =150 Fig 12. Gate Charge Waveform AP4511GED-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T Peak T ...

  • Page 6

    ... AP4511GED-HF P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 110 ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

  • Page 7

    ... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 AP4511GED-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse t Duty factor = t/T Peak ...