The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4511GH-A

Manufacturer Part NumberAP4511GH-A
DescriptionThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4511GH-A datasheet
 


Specifications of AP4511GH-A

Vds35VVgs±20V
Rds(on) / Max(m?) Vgs@10v27Rds(on) / Max(m?) Vgs@4.5v36
Qg (nc)11Qgs (nc)3
Qgd (nc)6Id(a)8.6
Pd(w)3.125ConfigurationComplementary N-P
PackageTO-252-4L  
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1/D2
S1
G1
S2
G2
TO-252-4L
N-channel
3
3
1
Parameter
3
AP4511GH-A
RoHS-compliant Product
N-CH BV
35V
DSS
R
27mΩ
DS(ON)
I
8.6A
D
P-CH BV
-35V
DSS
R
45mΩ
DS(ON)
I
-6.7A
D
D1
G2
G1
S1
Rating
Units
P-channel
35
-35
±20
±20
8.6
-6.7
6.9
-5.4
50
-50
3.125
0.025
W/℃
-55 to 150
-55 to 150
Value
Units
℃/W
Max.
8
℃/W
Max.
40
200627072-1/7
D2
S2
V
V
A
A
A
W

AP4511GH-A Summary of contents

  • Page 1

    ... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1/ TO-252-4L N-channel Parameter 3 AP4511GH-A RoHS-compliant Product N-CH BV 35V DSS R 27mΩ DS(ON) I 8.6A D P-CH BV -35V DSS R 45mΩ DS(ON) I -6. ...

  • Page 2

    ... AP4511GH-A N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

  • Page 3

    ... =- =-28V DS V =-4. =-18V =3.3Ω, =18Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-6A =-6A dI/dt=-100A/µs AP4511GH-A Min. Typ. -35 - =-1mA - -0. =-250uA -0 =-10V ...

  • Page 4

    ... AP4511GH-A N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 5

    ... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 10ms 100ms 0.1 1s 10s 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 AP4511GH-A f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 0.01 Duty factor = t/T Peak Rthja=75℃/W Single Pulse 0 ...

  • Page 6

    ... AP4511GH-A P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 7

    ... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 10ms 0.1 100ms 1s 10s 0.01 0.0001 10 100 Fig 10. Effective Transient Thermal Impedance =150 C j -4. Fig 12. Gate Charge Waveform AP4511GH-A f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 Duty factor = t/T ...

  • Page 8

    ... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252(4L Part Marking Information & Packing : TO-252(4L) XXXXGH YWWSSS Part Number LOGO Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM MAX A 6.40 6.6 6.80 B 5.2 5.35 5.50 C 9.40 9.80 10.20 D 2.40 2.70 3.00 1.27 REF 0.50 0.65 0.80 E3 3.50 4.00 4.50 R 0.80 1.00 1.20 G 0.40 0.50 0.60 H 2.20 2.30 2.40 J 0.45 0.50 0.55 K 0.00 0.075 0.15 L 0.90 1.20 1.50 M 5.40 5.60 5.80 1.All Dimensions Are in Millimeters. ...