AP4513GH-A Advanced Power Electronics Corp., AP4513GH-A Datasheet
AP4513GH-A
Specifications of AP4513GH-A
Related parts for AP4513GH-A
AP4513GH-A Summary of contents
Page 1
... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1/ TO-252-4L N-channel Parameter 3 AP4513GH-A RoHS-compliant Product N-CH BV 35V DSS R 32mΩ DS(ON) I 7.7A D P-CH BV -35V DSS R 68mΩ DS(ON) I -5. ...
Page 2
... AP4513GH-A N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
Page 3
... =- =-28V DS V =-4. =-15V =3.3Ω, =15Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-5A =-5A dI/dt=-100A/µs AP4513GH-A Min. Typ. =-250uA -35 - =-1mA - -0. =-250uA -0 ...
Page 4
... AP4513GH-A N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...
Page 5
... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 10ms 0.1 100ms 1s 10s 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 Fig 12. Gate Charge Waveform AP4513GH-A f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 T 0.01 Duty factor = t/T Peak T ...
Page 6
... AP4513GH-A P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...
Page 7
... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 10ms 0.1 100ms 1s 10s 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o =150 AP4513GH-A f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 t 0.01 Duty factor = t/T Peak Rthja=75℃/W Single Pulse ...
Page 8
... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252(4L Part Marking Information & Packing : TO-252(4L) XXXXGH YWWSSS Part Number LOGO Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM MAX A 6.40 6.6 6.80 B 5.2 5.35 5.50 C 9.40 9.80 10.20 D 2.40 2.70 3.00 1.27 REF 0.50 0.65 0.80 E3 3.50 4.00 4.50 R 0.80 1.00 1.20 G 0.40 0.50 0.60 H 2.20 2.30 2.40 J 0.45 0.50 0.55 K 0.00 0.075 0.15 L 0.90 1.20 1.50 M 5.40 5.60 5.80 1.All Dimensions Are in Millimeters. ...