AP4513GH-A Advanced Power Electronics Corp., AP4513GH-A Datasheet - Page 5

• Manufacturer Part Number: AP4513GH-A
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4513GH-A

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 32
• Rds(on) / Max(m?) Vgs@4.5v: 54
• Qg (nc): 6
• Qgs (nc): 2
• Qgd (nc): 3
• Id(a): 7.7
• Pd(w): 3.125
• Configuration: Complementary N-P
• Package: TO-252-4L

N-Channel
0.01
100
0.1
20
15
10
12
10
9
6
3
0
5
0
1
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
V
DS
I
V
DS
D
DS
=5V
Single Pulse
= 7 A
=2 8 V
V
T
Q
, Drain-to-Source Voltage (V)
GS
4
2
A
T
=25
G
j
, Gate-to-Source Voltage (V)
=25
, Total Gate Charge (nC)
1
o
C
o
C
8
4
T
j
10
=150
12
6
o
C
100us
100ms
10ms
1ms
10s
1s
100
16
8
Fig 10. Effective Transient Thermal Impedance
1000
100
0.01
10
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.02
Duty factor=0.5
0.01
0.1
0.001
G
0.05
5
Single Pulse
0.2
Q
V
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
0.1
G
GD
Charge
17
1
AP4513GH-A
P
DM
Duty factor = t/T
Peak T
Rthja=75℃/W
10
21
j
= P
t
DM
f=1.0MHz
T
x R
100
25
thja
C
C
C
+ T
Q
iss
A
oss
rss
1000
29
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