AP4513GH-A Advanced Power Electronics Corp., AP4513GH-A Datasheet - Page 4

• Manufacturer Part Number: AP4513GH-A
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4513GH-A

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 32
• Rds(on) / Max(m?) Vgs@4.5v: 54
• Qg (nc): 6
• Qgs (nc): 2
• Qgd (nc): 3
• Id(a): 7.7
• Pd(w): 3.125
• Configuration: Complementary N-P
• Package: TO-252-4L

N-Channel
AP4513GH-A
60
50
40
30
20
30
20
10
0
5
4
3
2
1
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
V
Reverse Diode
V
1
SD
T
DS
GS
j
4
=150
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
0.4
o
C
2
T
C
=25
0.6
6
T
o
I
C
C
D
3
=25
=5A
0.8
o
C
8
T
j
4
=25
V
1
G
=3.0V
o
7.0V
5.0V
4.5V
C
10V
1.2
5
10
1.5
1.1
0.7
0.3
30
20
10
1.8
1.4
1.0
0.6
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
I
V
C
D
G
= 150
=7A
=10V
v.s. Junction Temperature
Junction Temperature
T
V
1
o
C
j
DS
0
0
,Junction Temperature (
T
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
2
50
50
3
o
100
100
C)
4
V
o
C)
G
7.0V
5.0V
4.5V
=3.0V
10V
150
150
5
4/7