AP6677GH Advanced Power Electronics Corp., AP6677GH Datasheet - Page 4

• Manufacturer Part Number: AP6677GH
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6677GH

• Vds: -40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12.3
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Qg (nc): 44
• Qgs (nc): 6
• Qgd (nc): 28
• Id(a): -60
• Pd(w): 69
• Configuration: Single P
• Package: TO-252

AP6677GH
1000
100
10
12
10
1
8
6
4
2
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
10%
90%
V
V
Single Pulse
GS
T
DS
10
C
-V
=25
Q
DS
G
20
o
t
C
d(on)
, Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
I
DS
D
1
=-30A
=-32V
30
t
r
40
50
10
t
d(off)
60
t
f
100ms
70
100us
10ms
1ms
DC
100
80
Fig 10. Effective Transient Thermal Impedance
4000
3000
2000
1000
0.01
0.1
0.00001
0
1
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
V
0.01
0.02
0.1
0.05
0.2
Duty factor=0.5
G
Single Pulse
5
0.0001
Q
-V
GS
DS
9
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
0.1
DM
f=1.0MHz
T
x R
25
thjc
C
C
+ T
C
Q
oss
C
rss
iss
29
1
4