AP9465BGH Advanced Power Electronics Corp., AP9465BGH Datasheet - Page 3

• Manufacturer Part Number: AP9465BGH
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9465BGH

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 32
• Rds(on) / Max(m?) Vgs@4.5v: 45
• Qg (nc): 6.6
• Qgs (nc): 1.5
• Qgd (nc): 4
• Id(a): 20
• Pd(w): 20.8
• Configuration: Single N
• Package: TO-252

40
30
20
10
40
36
32
28
24
20
10
0
8
6
4
2
0
0.0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
V
V
1.0
Reverse Diode
DS
V
T
GS
SD
j
0.4
, Drain-to-Source Voltage (V)
4
=150
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
o
C
2.0
T
0.8
6
C
=25
I
T
3.0
D
C
=8A
T
o
=25
C
j
=25
o
C
1.2
o
8
C
V
4.0
G
= 3.0 V
7.0 V
5.0V
4.5 V
10V
5.0
1.6
10
2.0
1.6
1.2
0.8
0.4
1.2
1.1
1.0
0.9
0.8
0.7
0.6
40
30
20
10
0
0.0
Fig 4. Normalized On-Resistance
-50
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=12A
=10V
v.s. Junction Temperature
Junction Temperature
V
1.0
DS
T
T
0
0
j
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
, Junction Temperature (
2.0
50
50
T
AP9465BGH/J
C
=150
3.0
o
C
100
100
o
V
o
C)
4.0
C)
G
=3.0V
7 .0V
5.0V
4.5 V
10V
150
5.0
150
3