AP9465BGH Advanced Power Electronics Corp., AP9465BGH Datasheet - Page 4

• Manufacturer Part Number: AP9465BGH
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9465BGH

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 32
• Rds(on) / Max(m?) Vgs@4.5v: 45
• Qg (nc): 6.6
• Qgs (nc): 1.5
• Qgd (nc): 4
• Id(a): 20
• Pd(w): 20.8
• Configuration: Single N
• Package: TO-252

AP9465BGH/J
100
10
1
0
16
12
40
30
20
10
8
4
0
0
0.1
0
0
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
Fig 7. Gate Charge Characteristics
V
Single Pulse
T
DS
C
=5V
=25
1
o
V
Q
V
C
4
DS
G
GS
V
V
, Total Gate Charge (nC)
,Drain-to-Source Voltage (V)
I
DS
V
, Gate-to-Source Voltage (V)
1
2
DS
D
DS
=20V
=12A
=24V
T
=32V
j
=25
8
3
o
C
10
4
12
T
j
=150
5
100us
1ms
10ms
100ms
DC
o
C
100
16
6
Fig 10. Effective Transient Thermal Impedance
1000
0.01
100
0.1
10
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.05
0.02
0.01
0.2
0.1
V
Duty factor = 0.5
Single Pulse
G
5
0.0001
Q
V
GS
DS
9
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty Factor = t/T
Peak T
21
j
= P
t
f=1.0MHz
0.1
DM
T
x R
25
thjc
Q
+ T
C
C
C
C
iss
oss
rss
29
1
4