Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9468GS

Manufacturer Part NumberAP9468GS
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP9468GS datasheet
 


Specifications of AP9468GS

Vds40VVgs±20V
Rds(on) / Max(m?) Vgs@10v7Rds(on) / Max(m?) Vgs@4.5v9
Qg (nc)36Qgs (nc)4
Qgd (nc)20Id(a)80
Pd(w)89ConfigurationSingle N
PackageTO-263  
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Advanced Power
Electronics Corp.
▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
C
I
@T
=100℃
Continuous Drain Current
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data & specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
3
1
Parameter
AP9468GS
RoHS-compliant Product
BV
40V
DSS
R
7mΩ
DS(ON)
I
80A
D
G D
TO-263(S)
S
Rating
Units
40
+20
80
55
320
89
0.7
W/℃
-55 to 150
-55 to 150
Value
Units
1.4
℃/W
4
40
℃/W
200906193
V
V
A
A
A
W
1

AP9468GS Summary of contents

  • Page 1

    ... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 1 Parameter AP9468GS RoHS-compliant Product BV 40V DSS R 7mΩ DS(ON) I 80A D □ TO-263(S) S Rating ...

  • Page 2

    ... AP9468GS Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

  • Page 3

    ... 8.0 0.0 V Fig 2. Typical Output Characteristics 2.0 I =45A D V =10V G 1.6 1.2 0.8 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 8.0 C 7.0 6.0 5.0 4.0 1.6 0 Fig 6. On-Resistance vs. Drain Current AP9468GS o T =150 C 10V C 7 .0V 5.0V 4 =3.0V G 2.0 4.0 6.0 8.0 10.0 , Drain-to-Source Voltage ( 100 125 Junction Temperature ( =4. =10V ...

  • Page 4

    ... AP9468GS 16 I =30A =20V DS V =25V DS V =30V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 240 V =5V DS 200 ...