AP9468GS Advanced Power Electronics Corp., AP9468GS Datasheet

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... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 1 Parameter AP9468GS RoHS-compliant Product BV 40V DSS R 7mΩ DS(ON) I 80A D □ TO-263(S) S Rating ...

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... AP9468GS Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... 8.0 0.0 V Fig 2. Typical Output Characteristics 2.0 I =45A D V =10V G 1.6 1.2 0.8 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 8.0 C 7.0 6.0 5.0 4.0 1.6 0 Fig 6. On-Resistance vs. Drain Current AP9468GS o T =150 C 10V C 7 .0V 5.0V 4 =3.0V G 2.0 4.0 6.0 8.0 10.0 , Drain-to-Source Voltage ( 100 125 Junction Temperature ( =4. =10V ...

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... AP9468GS 16 I =30A =20V DS V =25V DS V =30V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 240 V =5V DS 200 ...