AP9972AGP Advanced Power Electronics Corp., AP9972AGP Datasheet - Page 3

• Manufacturer Part Number: AP9972AGP
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9972AGP

• Vds: 60V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 16
• Qg (nc): 49
• Qgs (nc): 13
• Qgd (nc): 20
• Id(a): 60
• Pd(w): 89
• Configuration: Single N
• Package: TO-220

200
150
100
20
18
16
14
12
10
40
30
20
10
50
0
0
Fig 3. On-Resistance v.s. Gate Voltage
0
0
5
Fig 1. Typical Output Characteristics
Fig 5. Forward Characteristic of
T
C
=25
0.2
o
Reverse Diode
V
V
C
6
V
DS
GS
SD
2
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.4
T
j
7
=150
0.6
4
o
C
8
T
I
D
C
0.8
=25
= 30 A
o
6
V
C
T
9
G
j
=25
1
=6.0V
9.0V
8.0V
7.0V
10V
o
C
1.2
10
8
100
2.0
1.6
1.2
0.8
0.4
1.5
1.3
1.1
0.9
0.7
0.5
80
60
40
20
0
-50
-50
0
Fig 6. Gate Threshold Voltage v.s.
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
V
T
I
D
G
C
=30A
=10V
=150
1
Junction Temperature
v.s. Junction Temperature
V
o
T
T
C
DS
0
0
j
j
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
50
50
3
AP9972AGP
4
100
100
o
o
C)
C)
V
G
5
=6.0V
9.0V
8.0V
7.0V
10V
150
150
6
3