AP95T08GP Advanced Power Electronics Corp., AP95T08GP Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP95T08GP

Manufacturer Part Number
AP95T08GP
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP95T08GP

Vds
80V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
7
Qg (nc)
93
Qgs (nc)
26
Qgd (nc)
42
Id(a)
80
Pd(w)
300
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The TO-220 package is universally preferred for all commercial-
industrial power applications and suited for low voltage applications
such as DC/DC converters.
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
3
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
-55 to 175
-55 to 175
G
Rating
BV
R
I
D
D
±20
320
300
80
80
70
DS(ON)
2
S
DSS
Value
0.5
62
AP95T08GP
Preliminary
200606071pre-1/4
TO-220(P)
7mΩ
Units
W/℃
Units
℃/W
℃/W
80V
80A
W
V
V
A
A
A

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AP95T08GP Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V GS @ 10V GS 1 Parameter AP95T08GP Preliminary BV 80V DSS R 7mΩ DS(ON) I 80A D G TO-220( Rating Units 80 ±20 80 ...

Page 2

... AP95T08GP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2.4 I =60A D V =10V G 2.0 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP95T08GP o C 10V 9.0V 8. Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( 100 150 200 o ...

Page 4

... AP95T08GP Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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