AP95T08GP Advanced Power Electronics Corp., AP95T08GP Datasheet - Page 4

• Manufacturer Part Number: AP95T08GP
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP95T08GP

• Vds: 80V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 7
• Qg (nc): 93
• Qgs (nc): 26
• Qgd (nc): 42
• Id(a): 80
• Pd(w): 300
• Configuration: Single N
• Package: TO-220

AP95T08GP
1000
100
14
12
10
10
1
8
6
4
2
0
0.1
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
0
Fig 7. Gate Charge Characteristics
10%
90%
V
V
DS
GS
I
20
D
V
= 40 A
V
DS
T
Single Pulse
Q
DS
V
c
1
t
, Drain-to-Source Voltage (V)
G
=25
d(on)
DS
= 40 V
V
, Total Gate Charge (nC)
DS
40
= 50 V
o
= 64 V
C
t
r
60
10
80
t
d(off)
100
100us
1ms
10ms
100ms
DC
t
100
f
120
1000
Fig 10. Effective Transient Thermal Impedance
Fig 8. Typical Capacitance Characteristics
10000
1000
0.01
100
0.1
0.00001
1
1
Fig 12. Gate Charge Waveform
10V
V
G
5
0.01
Duty factor=0.5
0.02
0.1
0.2
0.05
V
Single Pulse
0.0001
Q
DS
GS
,Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
0.001
Q
Q
13
G
Charge
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
0.1
f=1.0MHz
DM
T
x R
25
thjc
Q
C
C
+ T
C
oss
C
rss
iss
1
29
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