AP95T08GP Advanced Power Electronics Corp., AP95T08GP Datasheet - Page 3

• Manufacturer Part Number: AP95T08GP
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP95T08GP

• Vds: 80V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 7
• Qg (nc): 93
• Qgs (nc): 26
• Qgd (nc): 42
• Id(a): 80
• Pd(w): 300
• Configuration: Single N
• Package: TO-220

240
200
160
120
16
12
80
40
60
50
40
30
20
10
0
8
4
0
Fig 3. On-Resistance v.s. Gate Voltage
0
0
4
Fig 1. Typical Output Characteristics
T
C
Fig 5. Forward Characteristic of
= 25
0.2
V
5
o
V
DS
C
V
SD
T
1
Reverse Diode
GS
, Drain-to-Source Voltage (V)
j
0.4
=175
, Source-to-Drain Voltage (V)
Gate-to-Source Voltage (V)
6
o
C
0.6
2
7
T
I
C
D
0.8
=25
=30A
T
o
8
C
j
=25
1
3
o
V
C
G
9
1.2
= 6.0 V
9.0 V
8.0 V
7.0 V
10 V
10
1.4
4
120
100
2.4
2.0
1.6
1.2
0.8
0.4
Fig 2. Typical Output Characteristics
1.4
1.2
0.8
0.6
0.4
80
60
40
20
0
Fig 4. Normalized On-Resistance
1
Fig 6. Gate Threshold Voltage v.s.
-50
-50
0
T
V
I
C
D
G
= 1 75
=60A
=10V
Junction Temperature
v.s. Junction Temperature
V
0
0
o
DS
T
T
C
1
j
j
, Drain-to-Source Voltage (V)
,Junction Temperature (
, Junction Temperature (
50
50
2
100
100
AP95T08GP
3
o
o
150
C)
150
C)
V
G
= 6.0 V
9.0V
8.0V
7.0V
10V
200
200
4
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