AP09N10GP-HF Advanced Power Electronics Corp., AP09N10GP-HF Datasheet - Page 3

• Manufacturer Part Number: AP09N10GP-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP09N10GP-HF

• Vds: 100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 300
• Rds(on) / Max(m?) Vgs@4.5v: 600
• Qg (nc): 5.5
• Qgs (nc): 1.2
• Qgd (nc): 2.2
• Id(a): 4.4
• Pd(w): 12.5
• Configuration: Single N
• Package: TO-220

700
600
500
400
300
200
10
4
3
2
1
0
8
6
4
2
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
Total Power Dissipation
T
C
= 25
0.2
V
V
V
2
Reverse Diode
o
DS
SD
C
GS
4
T
, Drain-to-Source Voltage (V)
0.4
, Source-to-Drain Voltage (V)
Gate-to-Source Voltage (V)
j
=150
4
o
0.6
C
6
I
T
0.8
D
C
6
=1.5A
=25
o
T
1
C
j
8
=25
8
V
o
G
1.2
C
= 4.0V
7.0V
6.0V
5.0V
10V
1.4
10
10
2.4
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.0
8
6
4
2
0
0
-50
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
I
V
D
D
G
=250uA
=3A
=10V
T
2
C
V
v.s. Junction Temperature
Junction Temperature
= 150
DS
T
T
0
0
, Drain-to-Source Voltage (V)
j
j
4
o
, Junction Temperature (
, Junction Temperature (
C
6
AP09T10GP-HF
50
50
8
10
100
100
o
o
V
C)
C)
G
12
= 4.0V
7.0V
6.0V
5.0V
10V
150
14
150
3