AP09N10GP-HF Advanced Power Electronics Corp., AP09N10GP-HF Datasheet - Page 4

• Manufacturer Part Number: AP09N10GP-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP09N10GP-HF

• Vds: 100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 300
• Rds(on) / Max(m?) Vgs@4.5v: 600
• Qg (nc): 5.5
• Qgs (nc): 1.2
• Qgd (nc): 2.2
• Id(a): 4.4
• Pd(w): 12.5
• Configuration: Single N
• Package: TO-220

AP09T10GP-HF
100
0.1
10
12
10
1
6
5
4
3
2
1
0
8
6
4
2
0
0.1
0
Fig 11. Transfer Characteristics
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Total Power Dissipation
V
Operation in this area
limited by R
DS
I
V
T
Single Pulse
=5V
D
1
DS
C
= 3 A
=25
= 80 V
DS(ON)
T
V
V
Q
j
o
DS
=150
2
GS
1
2
C
G
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
, Total Gate Charge (nC)
o
C
3
10
4
4
T
j
=25
5
o
C
100
6
100ms
6
100us
10ms
1ms
DC
7
1000
8
8
Fig 10. Effective Transient Thermal Impedance
Fig 12. Maximum Continuous Drain Current
0.01
0.1
400
300
200
100
0.00001
1
0
6
5
4
3
2
1
0
1
25
Fig 8. Typical Capacitance Characteristics
0.02
0.01
Duty factor=0.5
0.1
0.2
0.05
Single Pulse
0.0001
5
v.s. Case Temperature
50
V
DS
T
C
9
t , Pulse Width (s)
0.001
,Drain-to-Source Voltage (V)
, Case Temperature (
75
13
0.01
17
100
0.1
P
DM
Duty factor = t/T
Peak T
21
o
C )
j
= P
t
125
DM
f=1.0MHz
T
1
x R
25
thjc
+ T
C
C
C
c
oss
rss
iss
150
10
29
4