AP09N20BGH-HF Advanced Power Electronics Corp., AP09N20BGH-HF Datasheet - Page 3

• Manufacturer Part Number: AP09N20BGH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP09N20BGH-HF

• Vds: 200V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 460
• Rds(on) / Max(m?) Vgs@4.5v: 500
• Qg (nc): 21
• Qgs (nc): 2
• Qgd (nc): 14
• Id(a): 7.8
• Pd(w): 69
• Configuration: Single N
• Package: TO-252

1.6
1.4
1.2
0.8
0.6
20
16
12
8
6
4
2
0
8
4
0
1
-50
0
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
T
C
= 25
0.2
Temperature
V
Reverse Diode
T
V
T
o
SD
C
j
j
DS
=150
8
0
, Junction Temperature (
, Source-to-Drain Voltage (V)
0.4
, Drain-to-Source Voltage (V)
o
C
0.6
16
50
0.8
DSS
T
v.s. Junction
1
j
=25
100
24
o
C)
o
V
C
1.2
G
=4.5V
7.0V
6.0V
5.0V
10V
150
1.4
32
2.8
2.4
1.6
1.2
0.8
0.4
16
12
8
4
0
2
0
1.4
1.2
0.8
0.6
0.4
-50
1
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
-50
V
I
T
GS
D
C
=5A
=10V
=150
v.s. Junction Temperature
Junction Temperature
V
T
o
T
DS
j
C
8
0
, Junction Temperature (
j
0
, Drain-to-Source Voltage (V)
, Junction Temperature (
AP09N20BGH-HF
16
50
50
o
100
100
24
C )
o
V
C )
GS
=4.5V
7.0V
6.0V
5.0V
10V
150
150
32
3