AP09N20BGH-HF Advanced Power Electronics Corp., AP09N20BGH-HF Datasheet - Page 4

• Manufacturer Part Number: AP09N20BGH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP09N20BGH-HF

• Vds: 200V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 460
• Rds(on) / Max(m?) Vgs@4.5v: 500
• Qg (nc): 21
• Qgs (nc): 2
• Qgd (nc): 14
• Id(a): 7.8
• Pd(w): 69
• Configuration: Single N
• Package: TO-252

AP09N20BGH-HF
100
10
10
1
0
8
6
4
2
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
90%
10%
Operation in this area
V
I
V
limited by R
Single Pulse
V
D
T
DS
GS
=5A
DS
c
=160V
=25
DS(ON)
V
10
Q
o
DS
C
1
G
t
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
t
20
r
10
30
t
d(off)
100
40
t
f
1ms
10ms
100ms
DC
1000
50
Fig10. Effective Transient Thermal Impedance
1000
0.01
800
600
400
200
0.1
0.00001
0
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
Duty factor=0.5
G
5
0.0001
0.01
0.05
0.02
0.2
0.1
V
Single Pulse
Q
DS
GS
, Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
0.001
Q
Q
13
G
Charge
GD
0.01
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
f=1.0MHz
T
x R
1
25
thjc
C
C
C
+ T
Q
oss
rss
iss
C
10
29
4