AP18N20GP-HF Advanced Power Electronics Corp., AP18N20GP-HF Datasheet - Page 3

• Manufacturer Part Number: AP18N20GP-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP18N20GP-HF

• Vds: 200V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 170
• Qg (nc): 19
• Qgs (nc): 5
• Qgd (nc): 6
• Id(a): 18
• Pd(w): 89
• Configuration: Single N
• Package: TO-220

240
210
180
150
120
40
30
20
10
14
12
10
0
8
6
4
2
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
= 25
0.2
o
V
C
T
Reverse Diode
V
V
SD
j
DS
4
4
GS
=150
0.4
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
Gate-to-Source Voltage (V)
o
C
0.6
6
8
0.8
T
I
C
D
=25
T
=5A
j
=25
o
1
C
8
12
o
C
V
1.2
G
= 6 .0V
8.0 V
16 V
12 V
10 V
10
1.4
16
1.5
1.3
1.1
0.9
0.7
0.5
2.8
2.4
2.0
1.6
1.2
0.8
0.4
30
20
10
0
-50
Fig 6. Gate Threshold Voltage v.s.
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
T
V
C
I
G
= 150
D
=10V
=8A
Junction Temperature
v.s. Junction Temperature
V
4
T
DS
T
o
0
0
j
C
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
AP18N20GS/P-HF
8
50
50
12
100
100
o
o
C)
V
16
C)
G
= 6 .0V
8.0 V
16 V
12 V
10 V
150
150
20
3