AP18N20GP-HF Advanced Power Electronics Corp., AP18N20GP-HF Datasheet - Page 4

• Manufacturer Part Number: AP18N20GP-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP18N20GP-HF

• Vds: 200V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 170
• Qg (nc): 19
• Qgs (nc): 5
• Qgd (nc): 6
• Id(a): 18
• Pd(w): 89
• Configuration: Single N
• Package: TO-220

AP18N20GS/P-HF
100
14
12
10
0.1
15
12
10
8
6
4
2
0
9
6
3
0
1
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
T
Single Pulse
V
c
DS
=25
I
=5V
V
D
4
o
= 10 A
C
DS
2
Q
V
1
, Drain-to-Source Voltage (V)
G
GS
, Total Gate Charge (nC)
T
, Gate-to-Source Voltage (V)
8
j
=25
V
4
V
DS
V
o
DS
= 100 V
C
DS
= 130 V
10
12
= 160 V
6
T
16
j
=150
100
8
o
20
C
100ms
100us
10ms
1ms
DC
1s
1000
10
24
Fig 10. Effective Transient Thermal Impedance
10000
1000
100
0.01
10
0.1
1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
V
DUTY=0.5
SINGLE PULSE
0.02
0.01
0.05
0.1
G
0.2
11
0.0001
V
Q
DS
GS
,Drain-to-Source Voltage (V)
21
t , Pulse Width (s)
0.001
Q
Q
G
Charge
GD
31
0.01
41
P
DM
Duty factor = t/T
Peak T
j
= P
t
0.1
DM
f=1.0MHz
T
x R
51
thjc
+ T
Q
C
C
C
C
oss
rss
iss
1
61
4