AP09N70P-A Advanced Power Electronics Corp., AP09N70P-A Datasheet - Page 3

• Manufacturer Part Number: AP09N70P-A
• Description: The TO-220 package is widely preferred for all commercial-industrial applications
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP09N70P-A

• Vds: 650V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 750
• Qg (nc): 44
• Qgs (nc): 11
• Qgd (nc): 12
• Id(a): 9
• Pd(w): 156
• Configuration: Single N
• Package: TO-220

100
0.1
1.2
1.1
0.9
0.8
10
10
8
6
4
2
0
1
1
-50
0
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
T
T
C
j
=25
0.2
= 150
T
Temperature
V
Reverse Diode
V
j
SD
o
, Junction Temperature (
DS
0
3
C
, Source-to-Drain Voltage (V)
o
, Drain-to-Source Voltage (V)
C
0.4
50
0.6
6
DSS
0.8
v.s. Junction
o
100
C)
9
V
T
G
j
1
= 3 .5 V
= 25
6.0V
5.0V
4.5V
4.0V
10V
o
C
150
1.2
12
10
5
4
3
2
1
8
6
4
2
0
3
2
1
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
D
G
T
=4.5A
=10V
C
=150
v.s. Junction Temperature
V
Junction Temperature
5
DS
T
T
0
o
0
j
C
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
, Junction Temperature (
10
50
50
15
AP09N70P-A
100
100
o
o
C)
20
V
C )
G
= 3 .5 V
6.0V
5.0V
4.5V
4.0V
10V
150
150
25
3