AP10N70I-A Advanced Power Electronics Corp., AP10N70I-A Datasheet - Page 3

• Manufacturer Part Number: AP10N70I-A
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP10N70I-A

• Vds: 650V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 620
• Qg (nc): 36
• Qgs (nc): 8.3
• Qgd (nc): 11.5
• Id(a): 10
• Pd(w): 31.3
• Configuration: Single N
• Package: TO-220CFM

1.3
1.2
1.1
0.9
0.8
0.1
20
16
12
10
8
4
0
1
1
-50
0
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
T
C
=25
0.2
Temperature
V
T
o
Reverse Diode
T
V
C
SD
j
j
DS
0
, Junction Temperature (
5
= 150
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.4
o
C
50
0.6
10
DSS
0.8
T
v.s. Junction
j
100
= 25
o
15
C)
V
o
1
C
G
6.0V
5.0V
4.5V
10V
=4.0V
150
1.2
20
1.4
1.2
0.8
0.6
0.4
3.2
2.8
2.4
1.6
1.2
0.8
0.4
16
12
1
2
0
8
4
0
-50
0
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
C
I
=150
G
D
=10V
=5A
25
v.s. Junction Temperature
V
Junction Temperature
o
DS
C
T
T
10
0
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
50
50
75
20
AP10N70I-A
100
100
30
o
o
C)
C )
V
125
G
6 .0V
5 .0V
4.5V
10V
=4 0V
150
150
40
3