IXFT150N20T IXYS, IXFT150N20T Datasheet - Page 4

• Manufacturer Part Number: IXFT150N20T
• Description: Trench HiperFETs
• Manufacturer: IXYS

Specifications of IXFT150N20T

• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 150
• Rds(on), Max, Tj=25°c, (?): 0.015
• Ciss, Typ, (pf): 11700
• Qg, Typ, (nc): 177
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: TO-268

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
180
160
140
120
100
350
300
250
200
150
100
100
80
60
40
20
50
0
0
3.0
0.3
0
f
= 1 MHz
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
5
0.5
4.0
10
0.6
Fig. 7. Input Admittance
4.5
T
Fig. 11. Capacitance
J
15
= 125ºC
0.7
V
DS
5.0
V
V
GS
SD
- Volts
0.8
20
- Volts
- Volts
T
5.5
J
= 125ºC
0.9
- 40ºC
T
25ºC
25
J
= 25ºC
6.0
1.0
30
6.5
1.1
C oss
C rss
C iss
35
7.0
1.2
1.3
7.5
40
1000
180
160
140
120
100
100
0.1
10
10
80
60
40
20
9
8
7
6
5
4
3
2
1
0
1
0
0
0
1
R
V
I
I
Fig. 12. Forward-Bias Safe Operating Area @ T
D
G
DS(on)
T
T
Single Pulse
DS
J
C
20
= 75A
= 10mA
20
= 150ºC
= 25ºC
= 100V
Limit
40
40
Fig. 8. Transconductance
60
60
10
Fig. 10. Gate Charge
Q
80
G
- NanoCoulombs
I
V
D
80
CE
- Amperes
100
- Volts
100
120
IXFH150N20T
IXFT150N20T
T
120
100
J
DC
= - 40ºC
140
125ºC
25ºC
140
160
25µs
100µs
1ms
10ms
100ms
C
= 25ºC
160
180
1000
180
200